333体育官网

CN EN
Home
About Us
Newpros
1200V 80 mΩ SIC MOSFET
1200V 80 mΩ SIC MOSFET Back
 PDF

Introduction 1. In recent years, the PV inverter market has entered a period of rapid development, and the demand for silicon carbide power devices has increased rapidly. When silicon carbide diode and MOSFET should be used in the BOOST circuit, the switching speed of the system can be improved, so as to optimize the energy consumption and volume of the whole system.
2. Silicon carbide MOSFET to match the PV industry customer needs, switching performance, pass-through capacity and product reliability can be standardized to the industry's best;
3. It is not only suitable for conventional switching applications, but also meets the high pressure and high speed switching applications with high control requirements. It adopts environment-friendly materials and conforms to RoHS standards.
Features 1. High temperature resistance, operating temperature (175°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency application conditions;
2. Using advanced thinning process, SIC MOSFET has excellent low impedance characteristics, reduce device energy loss;
3. Product packaging type: TO-247-3L, TO-247-4L and other packaging forms can be selected;
4. Passed the stringent reliability certification of the industry, including HTRB, HTGB test and HV-H3TRB test in large quantities.
SPECIFICATION

YJD212080NCFG1

Related new products

New N40V SGT MOSFETs for Sweeper

ESDM Series ESD Protection Diodes with Ultra-low Junction Capacitance Value of 0.05 pF

SMB-W Package EM540BG

Low VCE(sat)?3A?Bipolar?Transistor

P60V MOSFET for Automotive Electronics

SKBPC75 High Current Three Phase Bridge Rectifiers

Portable energy storage power supply special plug-in type fast recovery bridge

Micro-pattern trenches IGBT for Servo controller/frequency converter/industrial power supply

100V TOLL Package MOSFET

MMBZ Series ESD with Voltage Regulation Characteristics
网站地图